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參數資料
| 型號： | 2SJ486ZU-TR-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-59A, MPAK-3 |
| 文件頁數： | 5/9頁 |
| 文件大?。?/td> | 105K |
| 代理商： | 2SJ486ZU-TR-E |
2SJ486
Rev.3.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Channel
Dissipation
Pch
(mW)
Ambient Temperature
Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
–0.2
–0.4
–0.6
–0.8
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
–1–2–3–4–5
Tc = 75°C
200
0
50
100
150
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–5 V
–4 V
–2 V
–2.5 V
VGS = –1.5 V
Ta = 25°C
Pulse Test
Ta = 25°C
Pulse Test
Ta = 25°C
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–0.1
–0.3
–0.01
–0.003
–0.03
–0.001
–0.1
–0.3
–1
–3
–10
–30
–100
–1
Ta = 25°C
PW
=
10
ms
(1
shot)
DC
Operation
1 ms
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
0
–0.1
–0.2
–0.3
–0.4
0–2
–4
–6
–8
–10
ID = –0.2 A
–0.1 A
Drain Current
ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
2
1
0.5
0.2
0.1
–0.03
–1
–3
–0.01
–0.3
–0.1
–10
10
5
VGS = –2.5 V
–4 V
–25°C
25°C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ487 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 3A I(D) | TO-252 |
| 2SJ488 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5A I(D) | TO-252 |
| 2SJ489 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7A I(D) | TO-252 |
| 2SJ49 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:LOW FREQUENCY POWER AMPLIFIER |
| 2SJ490 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-252 |
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