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參數(shù)資料
| 型號(hào)： | 2SJ486 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes |
| 中文描述： | 硅P通道MOS FET的低FrequencyPower開關(guān) |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | 2SJ486 |
2SJ486
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
Pch
–30
V
Gate to source voltage
±
10
V
Drain current
–0.3
A
Drain peak current
–0.6
A
Channel dissipation
150
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1 %
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
–30
—
—
V
I
D
= –10
μ
A, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
10
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Zero gate voltege drain
current
I
DSS
—
—
–1.0
μ
A
V
DS
= –30 V, V
GS
= 0
Gate to source leak current
I
GSS
V
GS(off)
R
DS(on)
—
—
±
5.0
μ
A
V
GS
=
±
6.5V, V
DS
= 0
I
D
= –10
μ
A, V
DS
= –5V
I
D
= –100mA
V
GS
= –4V*
1
I
D
= –40mA
V
GS
= –2.5V*
1
I
D
= –100mA
V
DS
= –10V*
1
V
DS
= –10V
V
GS
= 0
f = 1MHz
Gate to source cutoff voltage
–0.5
—
–1.5
V
Static drain to source on state
resistance
—
0.5
0.65
R
DS(on)
—
0.7
1.2
Forward transfer admittance
|y
fs
|
0.4
0.65
—
S
Input capacitance
Ciss
—
45
—
pF
Output capacitance
Coss
—
76
—
pF
Reverse transfer capacitance Crss
—
5.4
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
—
120
—
ns
V
GS
= –4V
I
D
= –150mA
R
L
= 66.6
Rise time
—
340
—
ns
Turn-off delay time
—
850
—
ns
Fall time
Notes: 1. Pulse test
2. Marking is “ZU–”.
—
550
—
ns
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