參數(shù)資料
型號(hào): 2SJ479L
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel DV-L MOS FET High Speed Power Switching
中文描述: 硅P通道的DV -蜇場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān)
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 38K
代理商: 2SJ479L
2SJ479(L), 2SJ479(S)
4
Main Characteristics
100
75
50
25
0
50
100
150
200
–500
–200
–100
–20
–50
–10
–2
–5
–1
–0.5
–0.1 –0.3
Drain to Source Voltage V (V)
–1
–3
–10
–30
–100
1ms
Ta = 25
°
C
100
μ
PW=10ms(1sho)
DCOpeaion(T =25
°
C
10
μ
s
C
Case Temperature Tc (
°
C)
Power vs. Temperature Derating
D
D
Maximun Safe Operation Area
Operation in
this area is
limited by R
DS(on)
3
1
0.3
0.1
0.03
0.01
10
μ
100
μ
1 m
10 m
100 m
1
10
DM
P
PW
T
D =T
ch – c = 2.5
°
C/W, Tc = 25
°
C
θ γ θ
θ
Tc = 25
°
C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
N
s
γ
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