- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄33473 > 2SJ479L-E 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SJ479L-E |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 105K |
| 代理商： | 2SJ479L-E |
2SJ479(L), 2SJ479(S)
Rev.3.00 Jun 05, 2006 page 2 of 7
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–30
A
Drain peak current
ID (pulse)
Note 1
–120
A
Body to drain diode reverse drain current
IDR
–30
A
Channel dissipation
Pch
Note 2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–30
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
V
IG =
±100 A, VDS = 0
Zero gate voltage drain current
IDSS
—
–10
A
VDS = –30 V, VGS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
—
–2.0
V
ID = –1 mA, VDS = –10 V
RDS (on)
—
25
35
m
ID = –15 A, VGS = –10 V
Note 3
Static drain to source on state resistance
RDS (on)
—
40
60
m
ID = –15 A, VGS = –4 V
Note 3
Forward transfer admittance
|yfs|
12
20
—
S
ID = –15 A, VDS = –10 V
Note 3
Input capacitance
Ciss
—
1700
—
pF
Output capacitance
Coss
—
950
—
pF
Reverse transfer capacitance
Crss
—
260
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
20
—
ns
Rise time
tr
—
290
—
ns
Turn-off delay time
td (off)
—
170
—
ns
Fall time
tf
—
130
—
ns
VGS = –10 V
ID = –15 A
RL = 0.67
Body to drain diode forward voltage
VDF
—
–1.1
—
V
IF = –30 A, VGS = 0
Body to drain diode reverse recovery time
trr
—
70
—
ns
IF = –30 A, VGS = 0
diF/dt = 50 A/
s
Note:
3. Pulse test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ479STL-E | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ479L | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ479L | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ479S | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ483TZ-E | 5000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ479S | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ479STL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ48 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:LOW FREQUENCY POWER AMPLIFIER |
| 2SJ480 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 12V V(BR)DSS | 300MA I(D) | TO-236AB |
| 2SJ483 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。