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參數(shù)資料
| 型號： | 2SJ476-01S |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| P通道| 60V的五（巴西）直|第25A條（丁）|對252VAR |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2SJ476-01S |
2SJ479(L), 2SJ479(S)
4
Main Characteristics
100
75
50
25
0
50
100
150
200
–500
–200
–100
–20
–50
–10
–2
–5
–1
–0.5
–0.1 –0.3
–1
–3
–10
–30
–100
1 ms
Ta = 25
°C
100
s
PW
=
10
ms
(1shot)
DC
Operation
(Tc
=
25
°C)
10
s
Channel
Dissipation
Pch
(W)
Case Temperature Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage V
(V)
DS
Drain
Current
I
(A)
D
Maximun Safe Operation Area
Operation in
this area is
limited by R DS(on)
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t)
ch – c
ch – c = 2.5
°C/W, Tc = 25 °C
θ
γ
θ
Tc = 25
°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized
Transient
Thermao
Impedance
s
(t)
γ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK11 | TRANSISTOR | JFET | N-CHANNEL | 6.5MA I(DSS) | TO-17 |
| 2SK1101-01M | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1102-01M | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 10A I(D) | TO-218VAR |
| 2SK1103O | TRANSISTOR | JFET | N-CHANNEL | 200UA I(DSS) | TO-236 |
| 2SK1103P | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ477-01MR | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET |
| 2SJ477-01MR_06 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET |
| 2SJ477-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SJ478 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-220AB |
| 2SJ479 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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