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參數(shù)資料
| 型號： | 2SJ471-E |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 83K |
| 代理商： | 2SJ471-E |
2SJ471
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–50
0
–10
–20
–30
–40
0–2
–4
–6
–8
–10
–50
0
–10
–20
–30
–40
0
–1–2–3–4–5
Tc = –25°C
40
0
10
20
30
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–6 V
–5 V
–4 V
–3 V
–4.5 V
–3.5 V
VGS = –2.5 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–200
–100
–10
–20
–50
–1
–2
–5
–0.5
–0.1
–0.3
–1
–3
–10
–30
–100
–500
Ta = 25°C
PW
=
10
ms
(1
shot)
DC
Operation
(Tc
=
25°C)
1 ms
10
s
100
s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
–4
–8
–12
–16
–20
Pulse Test
ID = –20 A
–10 A
–5 A
Drain Current
ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
0.1
0.05
0.02
0.01
–2
–10
–20
–1
–5
–50
0.5
0.2
VGS = –4 V
–10 V
Pulse Test
75°C
25°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ472-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SJ472-01L | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Power MOSFET |
| 2SJ472-01L_06 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET |
| 2SJ472-01LSC | 制造商:Fuji Electric 功能描述: |
| 2SJ472-01S | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET |
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