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參數(shù)資料
| 型號(hào)： | 2SJ464 |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 100 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10R1B, SC-67, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 196K |
| 代理商： | 2SJ464 |
2SJ464
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut-off current
IDSS
VDS = 100 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 10 V, ID = 9 A
64
90
Drain-source ON resistance
RDS (ON)
VGS = 4 V, ID = 9 A
85
120
m
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 9 A
7
15
S
Input capacitance
Ciss
2900
pF
Reverse transfer capacitance
Crss
480
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1000
pF
Rise time
tr
25
Turn-on time
ton
45
Fall time
t
25
Switching time
Turn-off time
toff
Duty <= 1%, tw = 10 μs
170
ns
Total gate charge
(gate-source plus gate-drain)
Qg
140
nC
Gate-source charge
Qgs
90
nC
Gate-drain (“miller”) charge
Qgd
VDD 80 V, VGS = 10 V, ID = 18 A
50
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
18
A
Pulse drain reverse current
(Note 1)
IDRP
72
A
Forward voltage (diode)
VDSF
IDR = 18 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
220
ns
Reverse recovery charge
Qrr
IDR = 18 A, VGS = 0 V
dIDR/dt = 50 A/μs
0.97
μC
Marking
10 V
0 V
VGS
R
L
=5.55
Ω
VDD 50 V
ID = 9 A
VOUT
4.7
Ω
Lot No.
Note 4
J464
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ464(F) | 功能描述:MOSFET MOSFET P-Ch 100V 18A Rdson 0.09 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SJ464_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator, DC-DC Converter and Motor Drive Applications |
| 2SJ464_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator, DC-DC Converter and Motor Drive Applications |
| 2SJ465 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DC−DC Converter, Relay Drive and Motor Drive Applications |
| 2SJ465_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DC−DC Converter, Relay Drive and Motor Drive Applications |
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