參數(shù)資料
型號： 2SJ463A
元件分類： 小信號晶體管
英文描述： 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù)： 5/7頁
文件大?。?/td> 249K
代理商： 2SJ463A
Data Sheet D11198EJ2V0DS
3
2SJ463A
TYPICAL CHARACTERISTICS (TA = 25°C)
VDS =
3 V
TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
0
0.8
1.6
2.4
3.2
4.0
ID
-
Drain
Current
-
mA
0.001
0.01
0.1
1
10
100
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - mA
0.1
1
10
100
1000
Iy
fs
I-
Forward
Transfer
Admittance
-
mS
1
10
100
1000
VDS =
3 V
TA = 125C
TA = 75C
TA = 25C
TA =
25C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
ID - Drain Current - mA
0.1
1
10
100
1000
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
20
0
10
30
40
50
60
VGS =
2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
ID - Drain Current - mA
0.1
1
10
100
1000
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
0
10
20
30
40
50
60
TA = 125C
TA = 75C
VGS =
4 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
0
1
2
3
4
5
ID
-
Drain
Current
-
mA
0
20
40
60
80
100
VGS =
3 V
VGS =
2.5 V
VGS =
10 V
VGS =
6 V
VGS =
4 V
TA = 25C
TA =
25C
TA = 125C
TA = 75C
TA = 125C
TA = 75C
TA = –25C
TA = 25C
TA =
25C
TA = 25C
25
175
50
75
40
120
160
80
0
240
200
125
150
100
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
-
T
otal
P
o
w
er
Dissipation
-
mW
TA - Ambient Temperature - C
相關(guān)PDF資料
PDF描述
2SJ464 18 A, 100 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ476-01S 25 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ479L-E 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ479STL-E 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ479L 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ463A-T1 制造商:Renesas Electronics Corporation 功能描述:
2SJ463A-T1-A 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,30V,0.1A,23m ohm,SSP3 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 0.1A 3-Pin SC-70 T/R
2SJ464 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH 100V 18A 3PIN SC-67 - Rail/Tube
2SJ464(F) 功能描述:MOSFET MOSFET P-Ch 100V 18A Rdson 0.09 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SJ464_07 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator, DC-DC Converter and Motor Drive Applications
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