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參數(shù)資料
| 型號： | 2SJ461A-T2B-AT |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SC-59, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 994K |
| 代理商： | 2SJ461A-T2B-AT |
Data Sheet D17902EJ1V0DS
2
2SJ461A
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS =
50 V, VGS = 0 V
1.0
A
Gate Leakage Current
IGSS
VGS = m7.0 V, VDS = 0 V
m3.0
A
Gate Cut-off Voltage
VGS(off)
VDS =
3.0 V, ID = 1.0
A
0.7
0.9
1.3
V
Forward Transfer Admittance
Note
| yfs |
VDS =
3.0 V, ID = 10 mA
12
mS
Drain to Source On-state Resistance
Note
RDS(on)1
VGS =
2.5 V, ID = 3 mA
46
100
RDS(on)2
VGS =
4.0 V, ID = 10 mA
31
50
Input Capacitance
Ciss
VDS =
3.0 V
6
pF
Output Capacitance
Coss
VGS = 0 V
9
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
1.6
pF
Turn-on Delay Time
td(on)
VDD =
3.0 V, ID = 20 mA
32
ns
Rise Time
tr
VGS =
3.0 V
270
ns
Turn-off Delay Time
td(off)
RG = 10
45
ns
Fall Time
tf
130
ns
Note Pulsed
TEST CIRCUIT SWITCHING TIME
PG.
RG
0
VGS()
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS()
10%
90%
VGS
10%
0
ID()
90%
td(on)
tr
td(off)
tf
10%
τ
ID
0
ton
toff
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| 2SJ461A-T1B-AT | 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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| 2SJ462 | 2.5 A, 12 V, 0.19 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ463A | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ461-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 50V 0.1A 3-Pin SC-59 T/R |
| 2SJ462 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SJ462-T1(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 12V 2.5A 3-Pin(2+Tab) SC-84 T/R |
| 2SJ462-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,12V,2.5A,0.195/0.135ohm,MP-2 |
| 2SJ463 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
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