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參數(shù)資料
| 型號(hào)： | 2SJ461 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIMOLD, SC-59, 3 PIN |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 985K |
| 代理商： | 2SJ461 |
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1995
MOS FIELD EFFECT TRANSISTOR
2SJ461
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DATA SHEET
Document No. D10730EJ4V0DS00 (4th edition)
Date Published April 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
DESCRIPTION
The 2SJ461 is a switching device which can be driven directly
by a 2.5 V power source.
The 2SJ461 has excellent switching characteristics and is
suitable for use as a high-speed switching device in digital circuit.
FEATURES
Can be driven by a 2.5 V power source
Not necessary to consider driving current because of its high
input impedance.
Possible to reduce the number of parts by omitting the bias
resistor.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ461
SC-59 (Mini Mold)
Marking: H19
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
50
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m7.0
V
Drain Current (DC)
ID(DC)
m0.1
A
Drain Current (pulse)
Note
ID(pulse)
m0.2
A
Total Power Dissipation
PT
200
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note PW
≤ 10 ms, Duty Cycle ≤ 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
1.5
0.65
+0.1
–0.15
0.4
+0.1
–0.05
0.95
2.9
±0.2
0.4
+0.1
–0.05
0.3
1.1
to
1.4
Marking
0.16
+0.1
–0.06
0
to
0.1
1
2
3
1. Source
2. Gate
3. Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ462 | 2.5 A, 12 V, 0.19 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ463A | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ464 | 18 A, 100 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ476-01S | 25 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ479L-E | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ461-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ461-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 50V 0.1A 3-Pin SC-59 T/R |
| 2SJ462 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SJ462-T1(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 12V 2.5A 3-Pin(2+Tab) SC-84 T/R |
| 2SJ462-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,12V,2.5A,0.195/0.135ohm,MP-2 |
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