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參數(shù)資料
| 型號(hào)： | 2SJ458-TL |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 450 V, 5.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SMP-FD, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 41K |
| 代理商： | 2SJ458-TL |
2SJ458
No.8578-1/4
Features
Ultrahigh-speed switching.
High-speed diod.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--450
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
--2
A
Drain Current (Pulse)
IDP
--8
A
Allowable Power Dissipation
PD
1.65
W
Tc=25
°C60
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--10mA, VGS=0V
--450
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--360V, VGS=0V
--1.0
mA
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
±100
nA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--2.0
--3.0
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--1A
0.6
1.2
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=--1A, VGS=10V
4.0
5.5
Input Capacitance
Ciss
VDS=--20V, f=1MHz
700
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
110
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
40
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
25
ns
Rise Time
tr
See specified Test Circuit.
28
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
160
ns
Fall Time
tf
See specified Test Circuit.
55
ns
Diode Forward Voltage
VSD
IS=--2A, VGS=0V
--1.5
V
Diode Reverse Recovery Time
trr
IS=--2A, di / dt=100A / s
120
155
ns
Marking : J458
SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8578
N0806QB SY IM TC-00000278
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
2SJ458
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ459 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ460 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SJ461 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SJ461-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ461-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 50V 0.1A 3-Pin SC-59 T/R |
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