參數(shù)資料
型號(hào): 2SJ452
元件分類: 小信號(hào)晶體管
英文描述: 200 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: MPAK-3
文件頁(yè)數(shù): 2/8頁(yè)
文件大小: 38K
代理商: 2SJ452
2SJ452
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–50
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–0.2
A
Drain peak current
I
D(pulse)*
1
–0.4
A
Channel dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10 s, duty cycle ≤ 1%
Marking is "ZM–".
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–50
V
I
D = –100 A, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G = ±100 A, VDS = 0
Zero gate voltage drain current I
DSS
–1.0
AV
DS = –40 V, VGS = 0
Gate to source leak current
I
GSS
——
±2.0
AV
GS = ±16 V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–0.5
–1.5
V
I
D = –10 A, VDS = –5 V
Static drain to source on state
resistance
R
DS(on)1
5.0
7.0
I
D = –100 mA
V
GS = –4 V*
1
Static drain to source on state
resistance
R
DS(on)2
7.5
12.0
I
D = –40 mA
V
GS = –2.5 V*
1
Foward transfer admittance
|y
fs|
0.1
0.19
S
I
D = –100 mA*
1
V
DS = –10 V
Input capacitance
Ciss
1.1
pF
V
DS = –10 V
Output capacitance
Coss
15.7
pF
V
GS = 0
Reverse transfer capacitance
Crss
0.12
pF
f = 1 MHz
Turn-on delay time
t
d(on)
0.45
sV
GS = –10 V, ID = –0.1 A
Rise time
t
r
1.3
sR
L = 300
Turn-off delay tiem
t
d(off)
8.4
s
Fall time
t
f
5.6
s
Note:
1. Pulse Test
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