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| 型號(hào)： | 2SJ439(2-7B1B) |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 16 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7B1B, SC-64, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 382K |
| 代理商： | 2SJ439(2-7B1B) |
2SJ439
2005-03-04
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (πMOSV)
2SJ439
DC/DC Converter, Relay Drive and Motor Drive
Applications
2.5-V gate drive
Low drainsource ON-resistance
: RDS (ON) = 0.18 (typ.)
High forward transfer admittance
: |Yfs| = 6.0 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 16 V)
Enhancement mode
: Vth = 0.5~1.1 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
VDSS
16
V
Draingate voltage (RGS = 20 k)
VDGR
16
V
Gatesource voltage
VGSS
±8
V
DC
(Note 1)
ID
5
Drain current
Pulse(Note 1)
IDP
20
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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