參數(shù)資料
型號: 2SJ399
元件分類: 小信號晶體管
英文描述: 200 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: MPAK-3
文件頁數(shù): 4/8頁
文件大?。?/td> 132K
代理商: 2SJ399
2SJ399
Rev.2.00, Apr.05.2004, page 2 of 5
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–0.2
A
Drain peak current
ID(pulse)
Note
–0.4
A
Body to drain diode reverse drain current
IDR
–0.2
A
Channel dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note: PW ≤ 100
s, duty cycle ≤ 10%
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
–30
V
ID = –100
A, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
——V
IG = ±100
A, VDS = 0
Gate to source leak current
IGSS
——±2
AVGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
——–1
AVDS = –30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–1.0
–2.0
V
ID = –10
A, VDS = –5 V
—2.7
7.5
ID = –20 mA, VGS = –4 V
Static drain to source on state
resistance
RDS(on)
—2.0
7.0
ID = –10 mA, VGS = –10 V
Input capacitance
Ciss
1.1
pF
Output capacitance
Coss
22.3
pF
Reverse transfer capacitance
Crss
0.17
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td(on)
530
ns
Rise time
tr
2170
ns
Turn-off delay time
td(off)
7640
ns
Fall time
tf
7690
ns
ID = –0.1 A
VGS = –10 V
RL = 100
PW = 5
s
Note: Pulse Test
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