參數(shù)資料
型號(hào): 2SJ399
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET
中文描述: 硅P溝道場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 36K
代理商: 2SJ399
2SJ399
5
0
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
–10
–20
–30
–40
–50
100
50
20
10
2
1
5
0.2
0.1
0.5
Ciss
Coss
Crss
V = 0
f = 1 MHz
Drain Current I (A)
S
Switching Characteristics
10000
2000
5000
1000
200
500
100
–0.1
–0.2
–0.5
–1
–2
–5
tf
r
d(off)
t
d(on)
t
V = –10 V
PW = 5 μs
–0.5
–0.4
–0.3
–0.2
–0.1
0
–0.4
–0.8
–1.2
–1.6
–2.0
Source to Drain Voltage V (V)
R
D
Pulse Test
–10 V
–5 V
V = 0
Reverse Drain Current vs.
Source to Drain Voltage
相關(guān)PDF資料
PDF描述
2SJ400 Ultrahigh-Speed Switching Applications
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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