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參數(shù)資料
| 型號(hào)： | 2SJ390 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P溝道場效應(yīng)晶體管性（P溝道MOSFET的） |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 2SJ390 |
2SJ390
5
–10
–8
–6
–4
–2
0
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
–1
–2
–3
–4
–5
Tc = –25 °C
75 °C
25 °C
V = –10 V
Pulse Test
–1.0
–0.8
–0.6
–0.4
-0.2
0
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
–4
–8
–12
–16
–20
Pulse Test
–2 A
I = –5 A
–1 A
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
5
2
1
0.2
0.5
0.1
0.05
–0.1 -0.3
–1
–3
–10
–30
–100
–10 V
V = –4 V
Pulse Test
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