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參數(shù)資料
| 型號： | 2SJ389S |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 56K |
| 代理商： | 2SJ389S |
2SJ387(L), 2SJ387(S)
5
–0.5
–0.4
–0.3
–0.2
–0.1
0
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
–2
–4
–6
–8
–10
Pulse Test
D
I
= –5 A
–1 A
–2 A
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
1
0.2
0.5
0.1
0.01
0.02
0.05
–0.5
–1
–2
–5
–10 –20
–50
–4 V
Pulse Test
V
= –2.5 V
GS
0.2
0.16
0.12
0.08
0.04
–40
0
40
80
120
160
Case Temperature
Tc
(°C)
0
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
–4 V
D
I
= –5 A
–1, –2 A
GS
V
= –2.5 V
–5 A
–2 A
–1 A
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
50
20
10
2
5
1
0.5
–0.1 –0.2
–0.5
–1
–2
–5
–10
Tc = –25 °C
75 °C
25 °C
V
= –10 V
Pulse Test
DS
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