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參數(shù)資料
| 型號： | 2SJ384(L) |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| P通道| 60V的五（巴西）直| 15A條（?。﹟對262AA |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2SJ384(L) |
2SJ387(L), 2SJ387(S)
6
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body to Drain Diode Reverse
Recovery Time
–0.1 –0.3
–1
–3
–10
–30
–100
1000
200
500
100
20
50
10
di / dt = 20 A /
s
V
= 0, Ta = 25
°C
GS
0
–10
–20
–30
–40
–50
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
10000
2000
5000
1000
200
500
100
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
0
–10
–20
–30
–40
0
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
0
–4
–8
–12
–16
–20
–50
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
20
40
60
80
100
DS
V
GS
V
= –5 V
–10 V
–15 V
DD
D
I
= –10 A
VDD = –5 V
–10 V
–15 V
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
1000
200
500
100
20
50
10
–0.1 –0.3
–1
–3
–10
–30
–100
d(off)
t
V
= –4 V, V
= –10 V
PW = 5 s, duty < 1 %
GS
DD
t f
r
t
d(on)
t
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ384(S) | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-263AB |
| 2SJ384L | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ384S | |
| 2SJ388(L) | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-251AA |
| 2SJ469 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ384S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SJ386 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ386TZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ387 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
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