- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49988 > 2SJ377 5 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | 2SJ377 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-64, 2-7B1B, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 748K |
| 代理商： | 2SJ377 |
2SJ377
2006-11-16
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L
2
πMOSV)
2SJ377
Relay Drive, DC/DC Converter and Motor Drive
Applications
4 V gate drive
Low drainsource ON-resistance
: RDS (ON) = 0.16 (typ.)
High forward transfer admittance
: |Yfs| = 4.0 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 60 V)
Enhancement mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
5
A
Drain current
Pulse (Note 1)
IDP
20
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
273
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 14.84 mH, RG = 25 ,
IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ378 | 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ383TP | 8000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ402(2-10S2B) | 30 A, 60 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ410-E | 6 A, 200 V, 0.85 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ411 | 5000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ377(Q) | 制造商:Toshiba 功能描述:Pch -60V -5A PW-MOLD(5.5~6.8) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CHAN 60V 5A PW-MOLD |
| 2SJ377(TE16L,NQ) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) New PW-Mold T/R |
| 2SJ377(TE16L1,NQ) | 功能描述:MOSFET P-Ch 60V 5A Rdson 0.19 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SJ377(TE16R) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CHAN 60V 5A PW-MOLD |
| 2SJ377(TE16R1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) New PW-Mold T/R 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CHAN 60V 5A PW-MOLD |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。