型號: | 2SJ357-T2-AZ |
元件分類: | 小信號晶體管 |
英文描述: | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
封裝: | COMPACT, MP-2, 3 PIN |
文件頁數(shù): | 1/4頁 |
文件大?。?/td> | 165K |
代理商: | 2SJ357-T2-AZ |
相關(guān)PDF資料 |
PDF描述 |
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2SJ382-TR | 4 A, 12 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
2SJ337-TR | 8 A, 12 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
2SK2317-TR | 4 A, 20 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
2SJ381-TC | 2 A, 12 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243 |
2SJ335-TC | 0.5 A, 12 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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2SJ358 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
2SJ358-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SC-62 T/R |
2SJ360 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistors |
2SJ360(F) | 功能描述:MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
2SJ360(TE12L | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 1A 4-Pin(3+Tab) PW-Mini T/R |