參數(shù)資料
型號: 2SJ353
元件分類: 小信號晶體管
英文描述: 1500 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù): 3/6頁
文件大小: 58K
代理商: 2SJ353
2SJ353
3
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD
BIAS SAFE OPERATING AREA
dT
-
Derating
Factor
-
%
0
100
80
60
40
20
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
ID
-
Drain
Current
-
A
–1
–10
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
ID
-
Drain
Current
-
A
0
–5
–4
–3
–2
–1
VDS - Drain to Source Voltage - V
TRANSFER CHARACTERISTICS
ID
-
Drain
Current
-
A
–0.5
–10
–1
–0.1
–0.01
–0.001
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
|-
Forward
Transfer
Admittance
-
S
–0.001
10
1
0.1
0.01
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
–0.01
1.4
1.2
1
0.8
0.6
0.4
0.2
0
ID - Drain Current - A
30
60
90
120
150
–5
–2
–1
–0.5
–0.2
–0.1
–2
–5
–10
–20
–50
–100
Single pulse
PW
=
100
ms
10
ms
1 ms
DC
–1
–2
–3
–4
–5
–10
V
–4.5
V
–4.0
V
–3.5 V
–3.0 V
–2.5 V
VGS = –2.0 V
–4
–1
–1.5
–2
–2.5
–3
–3.5
–25 C
25 C
TA = 75 C
VDS = 10 V
–1
–0.01
–0.1
VDS = –10 V
75 C
25 C
TA = –25 C
VGS = –4 V
–25 C
TA = 75 C
25 C
–0.1
–1
–10
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