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參數(shù)資料
| 型號： | 2SJ350 |
| 元件分類： | JFETs |
| 英文描述： | 0.9 ohm, POWER, FET |
| 封裝： | TO-220FM, 3 PIN |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 44K |
| 代理商： | 2SJ350 |
2SJ350
5
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
–0.1 –0.2
10
1000
200
500
100
20
50
di / dt = 50 A / s, V
= 0
Ta = 25 °C, Pulse Test
GS
–0.5
–1
–2
–5
–10
0
–10
–20
–30
-40
–50
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
5000
2000
1000
500
200
100
20
50
10
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
0
–40
–80
–120
–160
0
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
0
–4
–8
–12
–16
–20
–200
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
20
40
60
80
100
DS
V
GS
V
= –25 V
–50 V
–80 V
DD
I
= –6 A
D
V
= –25 V
–50 V
–80 V
DD
500
200
100
50
20
10
5
–0.05 –0.1 –0.2
–0.5
–1
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
–2
–5
–10
V
= –10 V, V
= –30 V
PW = 2 s, duty < 1 %
GS
DD
t f
r
t
d(off)
t
d(on)
t
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PDF描述 |
|---|---|
| 2SJ352 | POWER, FET |
| 2SJ351 | POWER, FET |
| 2SJ353 | 1500 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ353-AZ | 1500 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ355-T1-AZ | 2 A, 30 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ350-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ351 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ351(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ351-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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