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參數(shù)資料
| 型號(hào)： | 2SJ350-E |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 120 V, 0.9 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, TO-220FM, 3 PIN |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | 2SJ350-E |
2SJ350
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–10
0
–2
–4
–6
–8
0
–4
–8
–12
–16
–20
–10
0
–2
–4
–6
–8
0
–1–2–3–4–5
Tc = –25°C
40
0
10
20
30
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–3.5 V
–6 V
–4 V
–3 V
VGS = –2.5 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–10
–5
–1
–2
–0.1
–0.2
–0.5
–2
–5
–10
–20
–50
–100 –200
–20
Ta = 25°C
PW
=
10
ms
(1
shot)
DC
Operation
(Tc
=
25°C)
1 ms
10
s
100
s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–5
0
–1
–2
–3
–4
0
–4
–8
–12
–16
–20
Pulse Test
ID = –5 A
–1 A
–2 A
Drain Current
ID (A)
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
2
1
0.2
0.5
0.1
–0.5
–2
–0.1 –0.2
–1
–10
–5
–20
5
Pulse Test
VGS = –4 V
–10 V
25°C
75°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ351 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ351(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ351-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ352 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 200V 8A 3PIN TO-3P - Rail/Tube |
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