參數(shù)資料
型號(hào): 2SJ338
元件分類: JFETs
英文描述: 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, 2-7J1B, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 119K
代理商: 2SJ338
2SJ338
2010-01-05
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
2SJ338
Audio-Frequency Power Amplifier Applications
High breakdown voltage
: VDSS = 180 V
High forward transfer admittance
: |Yfs| = 0.7 S (typ.)
Complementary to 2SK2162
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
180
V
Gate-source voltage
VGSS
±20
V
Drain current
(Note 1)
ID
1
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Unit: mm
1.1
± 0.2
0.1
±
0.1
1.05 MAX.
2.3
± 0.15
5.2
± 0.2
0.8 MAX.
0.6 MAX.
9.5
±
0.3
1.2
MA
X
.
1.5
±
0.2
6.5
± 0.2
1
2
3
0.6 MAX.
5.5
±
0.2
0.6
± 0.15
2.3
±
0.
2
2.3
± 0.15
1. GATE
2. DRAIN
HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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