參數(shù)資料
型號: 2SJ333L
英文描述: Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
文件頁數(shù): 5/8頁
文件大?。?/td> 216K
代理商: 2SJ333L
相關PDF資料
PDF描述
2SJ333S
2SJ335 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SJ336 TRANSISTOR | MOSFET | P-CHANNEL | 12V V(BR)DSS | 2A I(D) | TO-251
2SJ338O Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SJ338Y TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 1A I(D) | TO-251AA
相關代理商/技術參數(shù)
參數(shù)描述
2SJ333S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SJ334 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH 60V 30A 3PIN SC-67 - Rail/Tube
2SJ334(F) 功能描述:MOSFET MOSFET P-Ch 60V 30A Rdson 0.038 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SJ334(F,T) 功能描述:MOSFET MOSFET P-Ch 60V 30A Rdson 0.038 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SJ334_07 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DC−DC Converter, Relay Drive and Motor Drive Applications