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參數(shù)資料
| 型號(hào)： | 2SJ321 |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-220FN |
| 中文描述： | 晶體管| MOSFET的| P通道| 60V的五（巴西）直| 15A條（?。﹟對(duì)220FN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 148K |
| 代理商： | 2SJ321 |
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source breakdown
V
(BR)DSS
–60
voltage
———————————————————————————————————————————
Gate to source breakdown
V
(BR)GSS
±20
voltage
———————————————————————————————————————————
Gate to source leak current
I
GSS
—
———————————————————————————————————————————
Zero gate voltage drain current
I
DSS
—
———————————————————————————————————————————
Gate to source cutoff voltage
V
GS(off)
–1.0
———————————————————————————————————————————
Static drain to source on state
R
DS(on)
—
resistance
————————————————————————
—
Symbol
Min
Typ
Max
Unit
Test conditions
—
—
V
I
D
= –10 mA, V
GS
= 0
—
—
V
I
G
= ±100 μA, V
DS
= 0
—
±10
μA
V
GS
= ±16 V, V
DS
= 0
—
–250
μA
V
DS
= –50 V, V
GS
= 0
—
–2.25
V
I
D
= –1 mA, VDS= –10 V
0.075
0.095
I
D
= –8 A
V
GS
= –10 V *
0.09
0.12
I
D
= –8 A
V
GS
= –4 V *
———————————————————————————————————————————
Forward transfer admittance
|y
fs
|
8
12
—
S
I
D
= –8 A
V
DS
= –10 V *
———————————————————————————————————————————
Input capacitance
Ciss
—
————————————————————————————————
Output capacitance
Coss
—
————————————————————————————————
Reverse transfer capacitance
Crss
—
———————————————————————————————————————————
Turn–on delay time
t
d(on)
—
————————————————————————————————
Rise time
t
r
—
————————————————————————————————
Turn–off delay time
t
d(off)
—
————————————————————————————————
Fall time
t
f
—
———————————————————————————————————————————
Body–drain diode forward
V
DF
—
voltage
———————————————————————————————————————————
Body–drain diode reverse
t
rr
—
recovery time
———————————————————————————————————————————
* Pulse Test
1450
—
pF
V
DS
= –10 V
670
—
pF
V
GS
= 0
240
—
pF
f = 1 MHz
20
—
ns
I
D
= –8 A
95
—
ns
V
GS
= –10 V
230
—
ns
R
L
= 3.75
160
—
ns
–1.5
—
V
I
F
= –15 A, V
GS
= 0
160
—
ns
IF= –15 A, V
GS
= 0,
diF / dt = 50 A / μs
See characteristic curve of 2SJ290
2SJ321
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