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參數(shù)資料
| 型號(hào)： | 2SJ319L |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P溝道場效應(yīng)晶體管性（P溝道MOSFET的） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 53K |
| 代理商： | 2SJ319L |
2SJ319(L), 2SJ319(S)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch*
–200
V
Gate to source voltage
±20
V
Drain current
–3
A
Drain peak current
1
–12
A
Body to drain diode reverse drain current
–3
A
Channel dissipation
2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Notes 1. PW
≤
10 μs, duty cycle
≤
1%
2. Value at T
C
= 25°C
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–200
—
—
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
—
V
I
G
= ±100 μA, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±10
μA
V
GS
= ±16 V, V
DS
= 0
V
DS
= –160 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –2 A, V
GS
= –10 V*
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
–100
μA
V
GS(off)
R
DS(on)
–2.0
—
–4.0
V
Static drain to source on state
resistance
—
1.7
2.3
1
Forward transfer admittance
|y
fs
|
Ciss
1.0
1.7
—
S
I
D
= –2 A, V
DS
= –10 V*
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
1
Input capacitance
—
330
—
pF
Output capacitance
Coss
—
130
—
pF
Reverse transfer capacitance
Crss
—
25
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
10
—
ns
I
D
= –2 A, V
GS
= –10 V,
R
L
= 10
Rise time
—
30
—
ns
Turn-off delay time
—
40
—
ns
Fall time
—
30
—
ns
Body to drain diode forward
voltage
—
–1.15
—
V
I
F
= –3 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
—
180
—
μs
I
F
= –3 A, V
= 0,
di
F
/dt = 50 A/μs
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ319L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ319L-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET P-CH 200V 3A 3-Pin(3+Tab) DPAK(L)-(1) |
| 2SJ319S | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ319S-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET P-CH 200V 3A 3-Pin(2+Tab) DPAK(S) |
| 2SJ319STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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