參數(shù)資料
型號: 2SJ319
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET(P溝道MOSFET)
中文描述: 硅P溝道場效應(yīng)晶體管性(P溝道MOSFET的)
文件頁數(shù): 2/8頁
文件大小: 53K
代理商: 2SJ319
2SJ319(L), 2SJ319(S)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch*
–200
V
Gate to source voltage
±20
V
Drain current
–3
A
Drain peak current
1
–12
A
Body to drain diode reverse drain current
–3
A
Channel dissipation
2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Notes 1. PW
10 μs, duty cycle
1%
2. Value at T
C
= 25°C
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–200
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G
= ±100 μA, V
DS
= 0
Gate to source leak current
I
GSS
±10
μA
V
GS
= ±16 V, V
DS
= 0
V
DS
= –160 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –2 A, V
GS
= –10 V*
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
–100
μA
V
GS(off)
R
DS(on)
–2.0
–4.0
V
Static drain to source on state
resistance
1.7
2.3
1
Forward transfer admittance
|y
fs
|
Ciss
1.0
1.7
S
I
D
= –2 A, V
DS
= –10 V*
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
1
Input capacitance
330
pF
Output capacitance
Coss
130
pF
Reverse transfer capacitance
Crss
25
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
10
ns
I
D
= –2 A, V
GS
= –10 V,
R
L
= 10
Rise time
30
ns
Turn-off delay time
40
ns
Fall time
30
ns
Body to drain diode forward
voltage
–1.15
V
I
F
= –3 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
180
μs
I
F
= –3 A, V
= 0,
di
F
/dt = 50 A/μs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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