- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄351884 > 2SJ318S PDF資料下載
參數(shù)資料
| 型號： | 2SJ318S |
| 文件頁數(shù)： | 6/11頁 |
| 文件大小： | 54K |
| 代理商： | 2SJ318S |
2SJ319(L), 2SJ319(S)
4
–20
–16
–12
–8
–4
0
–4
–8
12
–16
–20
Gate to Source Voltage
V
(V)
GS
–1 A
–2 A
Pulse Test
D
I
= –5 A
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
10
5
2
1
0.5
0.2
0.1
–0.2
–0.5
–1
–2
–5
–10
V
= –10 V
Pulse Test
GS
5
4
3
2
1
–40
0
40
80
120
160
Case Temperature
Tc
(°C)
0
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
–2 A
–1 A
I
= –5 A
D
Static Drain to Source on State Resistance
vs. Temperature
V
= –10 V
Pulse Test
GS
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
3
2
1
0.5
0.2
0.1
–0.05 –0.1 –0.2
–0.5
–1
–2
–5
–10
Tc = –25 °C
25 °C
75 °C
V
= –10 V
Pulse Test
DS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ384(L | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-262AA |
| 2SJ384(L) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ384(S) | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-263AB |
| 2SJ384L | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ384S | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ319 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ319L | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ319L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ319L-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET P-CH 200V 3A 3-Pin(3+Tab) DPAK(L)-(1) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。