參數(shù)資料
型號(hào)： 2SJ318L
廠商： Hitachi,Ltd.
英文描述： Silicon P-Channel MOS FET(P溝道MOSFET)
中文描述： 硅P溝道場(chǎng)效應(yīng)晶體管性（P溝道MOSFET的）
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 53K
代理商： 2SJ318L
2SJ318(L), 2SJ318(S)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch*
–20
V
Gate to source voltage
±20
V
Drain current
–5
A
Drain peak current
1
–20
A
Body to drain diode reverse drain current
–5
A
Channel dissipation
2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Notes 1. PW
≤
10 μs, duty cycle
≤
1%
2. Value at T
C
= 25°C
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–20
—
—
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
—
V
I
G
= ±100 μA, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±10
μA
V
GS
= ±16 V, V
DS
= 0
V
DS
= –16 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –3 A, V
GS
= –10 V*
I
D
= –3 A, V
GS
= –4 V*
I
D
= –3 A, V
DS
= –10 V*
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
–100
μA
V
GS(off)
R
DS(on)
–1.0
—
–2.25
V
Static drain to source on state
—
0.09
0.13
S
1
resistance
—
0.14
0.19
1
Forward transfer admittance
|y
fs
|
Ciss
3.5
5.5
—
1
Input capacitance
—
580
—
pF
Output capacitance
Coss
—
520
—
pF
Reverse transfer capacitance
Crss
—
215
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
10
—
ns
I
D
= –3 A, V
GS
= –10 V,
R
L
= 3.3
Rise time
—
60
—
ns
Turn-off delay time
—
75
—
ns
Fall time
—
75
—
ns
Body to drain diode forward
voltage
—
–1.1
—
V
I
F
= –5 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
—
65
—
μs
I
F
= –5 A, V
= 0,
di
F
/dt = 50 A/μs
相關(guān)PDF資料
PDF描述
2SJ318 Silicon P-Channel MOS FET(P溝道MOSFET)
2SJ318S Silicon P-Channel MOS FET(P溝道MOSFET)
2SJ319L Silicon P-Channel MOS FET(P溝道MOSFET)
2SJ319 Silicon P-Channel MOS FET(P溝道MOSFET)
2SJ319S Silicon P-Channel MOS FET(P溝道MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ318S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SJ319 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET
2SJ319L 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ319L(E) 制造商:Renesas Electronics Corporation 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*