- 您現(xiàn)在的位置：買賣IC網 > PDF目錄351884 > 2SJ318(L) Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset PDF資料下載
參數(shù)資料
| 型號： | 2SJ318(L) |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| P通道| 20V的五（巴西）直| 5A條（丁）|對251AA |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 2SJ318(L) |
2SJ319(L), 2SJ319(S)
5
10
500
200
100
50
20
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
–0.05 –0.1
–0.2
–0.5
–1
–2
–5
di/dt = 50 A/s, V
= 0
duty < 1 %, Ta = 25 °C
GS
0
–10
–20
–30
-40
–50
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
1000
200
500
100
50
20
10
5
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
0
–100
–200
–300
–400
0
4
8
12
16
20
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
0
–4
–8
–12
–16
–20
–500
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
GS
V
DS
V
= –50 V
–100 V
–150 V
DD
V DD = –150 V
–100 V
–50 V
500
200
100
50
20
10
5
–10
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
–0.05 –0.1 –0.2
–0.5
–1
–2
–5
t f
r
t
d(off)
t
d(on)
t
V
= –10 V, V
= –30 V
duty < 1 %, PW = 2 s
GS
DD
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ318(S) | TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 5A I(D) | TO-252AA |
| 2SJ318L | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ318S | |
| 2SJ384(L | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-262AA |
| 2SJ384(L) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ318S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SJ319 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ319L | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ319L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。