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參數(shù)資料
| 型號(hào)： | 2SJ315(2-7B3B) |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7B3B, SC-64, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 175K |
| 代理商： | 2SJ315(2-7B3B) |
2SJ315
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 60 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VGS = 4 V, ID = 2.5 A
—
0.31
0.40
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
—
0.21
0.25
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
1.8
3.0
—
S
Input capacitance
Ciss
—
500
—
Reverse transfer capacitance
Crss
—
90
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
290
—
pF
Rise time
tr
—
20
—
Turnon time
ton
—
30
—
Fall time
tf
—
30
—
Switching time
Turnoff time
toff
—
140
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
20
—
Gatesource charge
Qgs
—
13
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 48 V,
VGS = 10 V,
ID = 5 A
—
7
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
5
A
Pulse drain reverse current
(Note 1)
IDRP
—
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
—
1.5
V
Marking
J315
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ316 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ317 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ317NY(TR-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ317NYTLE | 制造商:RENESAS 功能描述:RoHS COMPLIANT |
| 2SJ317NYTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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