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參數(shù)資料
| 型號(hào)： | 2SJ314-01L |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 邏輯電平MOSFET |
| 文件頁(yè)數(shù)： | 8/11頁(yè) |
| 文件大小： | 54K |
| 代理商： | 2SJ314-01L |
2SJ319(L), 2SJ319(S)
6
–5
–4
–3
–2
–1
0
–0.4
–0.8
–1.2
–1.6
–2
Source to Drain Voltage
V
(V)
SD
Pulse Test
–10 V
V
= 0, 5 V
GS
Reverse
Drain
Current
I
(A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
Pulse Width
PW (S)
Normalized
Transient
Thermal
Impedance
100 m
1
10
s
(t)
γ
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t)
ch – c
ch – c = 6.25 °C/W, Tc = 25 °C
θ
γ
θ
D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1 shot
Pulse
Tc = 25°C
Normalized Transient Thermal Impedance vs. Pulse Width
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ314-01S | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-252 |
| 2SJ318(L) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ318(S) | TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 5A I(D) | TO-252AA |
| 2SJ318L | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ318S | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ314-01LSC | 制造商:Fuji Electric 功能描述: |
| 2SJ314-01S | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET |
| 2SJ315 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:P CHANNEL MOS TYPE (DC-DC CONVERTER) |
| 2SJ316 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ317 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
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