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參數(shù)資料
| 型號： | 2SJ314-01 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大小： | 54K |
| 代理商： | 2SJ314-01 |
2SJ319(L), 2SJ319(S)
4
–20
–16
–12
–8
–4
0
–4
–8
12
–16
–20
Gate to Source Voltage
V
(V)
GS
–1 A
–2 A
Pulse Test
D
I
= –5 A
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
10
5
2
1
0.5
0.2
0.1
–0.2
–0.5
–1
–2
–5
–10
V
= –10 V
Pulse Test
GS
5
4
3
2
1
–40
0
40
80
120
160
Case Temperature
Tc
(°C)
0
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
–2 A
–1 A
I
= –5 A
D
Static Drain to Source on State Resistance
vs. Temperature
V
= –10 V
Pulse Test
GS
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
3
2
1
0.5
0.2
0.1
–0.05 –0.1 –0.2
–0.5
–1
–2
–5
–10
Tc = –25 °C
25 °C
75 °C
V
= –10 V
Pulse Test
DS
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|---|---|
| 2SJ314-01L | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ314-01S | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-252 |
| 2SJ318(L) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ318(S) | TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 5A I(D) | TO-252AA |
| 2SJ318L | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ314-01L | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET |
| 2SJ314-01LSC | 制造商:Fuji Electric 功能描述: |
| 2SJ314-01S | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET |
| 2SJ315 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:P CHANNEL MOS TYPE (DC-DC CONVERTER) |
| 2SJ316 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
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