參數(shù)資料
型號(hào): 2SJ313
元件分類: JFETs
英文描述: 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-10R1B, SC-67, 3 PIN
文件頁(yè)數(shù): 2/5頁(yè)
文件大小: 242K
代理商: 2SJ313
2SJ313
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VDS = 0, VGS = ±20 V
±100
nA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0
180
V
Gatesource cutoff voltage (Note 2)
VGS (OFF)
VDS = 10 V, ID = 10 mA
0.8
2.8
V
Drainsource saturation voltage
VDS (ON)
ID = 0.6 A, VGS = 10 V
1.2
3.0
V
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 0.3 A
0.7
S
Input capacitance
Ciss
210
Output capacitance
Coss
90
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
45
pF
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VGS (OFF) Classification
O: 0.8~1.6,
Y: 1.4~2.8
This transistor is the electrostatic-sensitive device.
Please handle with caution.
Marking
Note 3: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 3
J313
Part No. (or abbreviation code)
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