- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33471 > 2SJ312(2-10S2B) 14 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | 2SJ312(2-10S2B) |
| 元件分類： | JFETs |
| 英文描述： | 14 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 385K |
| 代理商： | 2SJ312(2-10S2B) |
2SJ312
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
―
±10
μA
Drain cutoff current
IDSS
VDS = 60 V, VGS = 0 V
―
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
―
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
―
2.0
V
VGS = 4 V, ID = 5 A
―
130
190
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 7 A
―
80
120
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 7 A
5.0
8.0
―
S
Input capacitance
Ciss
―
1200
―
Reverse transfer capacitance
Crss
―
220
―
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
―
550
―
pF
Rise time
tr
―
20
―
Turnon time
ton
―
30
―
Fall time
tf
―
25
―
Switching time
Turn-off time
toff
―
100
―
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
―
45
―
Gatesource charge
Qgs
―
30
―
Gatedrain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 14 A
―
15
―
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
―
14
A
Pulse drain reverse current
(Note 1)
IDRP
―
56
A
Forward voltage (diode)
VDSF
IDR = 14 A, VGS = 0 V
―
1.7
V
Reverse recovery time
trr
―
110
―
ns
Reverse recovery charge
Qrr
IDR = 14 A, VGS = 0 V
dIDR / dt = 50 A / μs
―
0.18
―
μC
Marking
Note 2: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 2
J312
Part No. (or abbreviation code)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ313-O | 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ313 | 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ315(2-7B1B) | 5 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ315(2-7B3B) | 5 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ315 | 0.04 ohm, POWER, FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ313 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio Frequency Power Amplifier Application |
| 2SJ313_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio Frequency Power Amplifier Application |
| 2SJ313_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio Frequency Power Amplifier Application |
| 2SJ313O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 1A I(D) | TO-220AB |
| 2SJ313Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 1A I(D) | TO-220AB |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。