參數(shù)資料
型號(hào): 2SJ305
元件分類(lèi): 小信號(hào)晶體管
英文描述: 200 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
封裝: S-MINI, 2-3F1F,SC-59, TO-236MOD, 3 PIN
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 322K
代理商: 2SJ305
2SJ305
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ305
High Speed Switching Applications
Analog Applications
High input impedance
Low gate threshold voltage.: Vth = 0.5~1.5 V
Excellent switching times.: ton = 0.06 μs (typ.)
toff = 0.15 μs (typ.)
Low drain-source ON resistance: RDS (ON) = 2.4 (typ.)
Small package.
Complementary to 2SK2009
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
30
V
Gate-source voltage
VGSS
±20
V
DC drain current
ID
200
mA
Drain power dissipation
PD
200
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device.
Please handle with caution.
Marking
Equivalent Circuit
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
相關(guān)PDF資料
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