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參數(shù)資料
| 型號： | 2SJ293 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P通道MOS FET的性（P溝道MOSFET的） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 29K |
| 代理商： | 2SJ293 |
2SJ293
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
I
AP
*
E
AR
*
Pch*
–60
V
Gate to source voltage
±20
V
Drain current
–15
A
Drain peak current
1
–60
A
Body to drain diode reverse drain current
–15
A
Avalanche current
3
–15
A
Avalanche energy
3
19
mJ
Channel dissipation
2
30
W
Channel temperature
Tch
150
°C
Storage temperature
Notes 1. PW 2 10 μs, duty cycle 2 1%
2. Value at T
C
= 25°C
3. Value at Tch = 25°C, Rg 3 50
Tstg
–55 to +150
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ294 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ295 | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220FN |
| 2SJ296(L) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ296(S) | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-263AB |
| 2SJ296L | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ294 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET |
| 2SJ295 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SJ295(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ296(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-262AA |
| 2SJ296(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-263AB |
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