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參數(shù)資料
| 型號： | 2SJ247 |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 100 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 62K |
| 代理商： | 2SJ247 |
2SJ247
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–100
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–8
A
Drain peak current
I
D(pulse)*
1
–32
A
Body to drain diode reverse drain current
I
DR
–8
A
Channel dissipation
Pch*
2
40
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at T
C = 25°C
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–100
—
V
I
D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
–250
AV
DS = –80 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1 mA, VDS = –10 V
Static drain to source on state
R
DS(on)
—
0.25
0.3
I
D = –4 A, VGS = –10 V*
1
resistance
—
0.3
0.45
I
D = –4 A, VGS = –4 V*
1
Forward transfer admittance
|y
fs|
3.0
5.5
—
S
I
D = –4 A, VDS = –10 V*
1
Input capacitance
Ciss
—
880
—
pF
V
DS = –10 V, VGS = 0,
Output capacitance
Coss
—
325
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
80
—
pF
Turn-on delay time
t
d(on)
—
12
—
ns
I
D = –4 A, VGS = –10 V,
Rise time
t
r
—
47
—
ns
R
L = 7.5
Turn-off delay time
t
d(off)
—
150
—
ns
Fall time
t
f
—75
—
ns
Body to drain diode forward
voltage
V
DF
—
–1.0
—
V
I
F = –8 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
170
—
ns
I
F = –8 A, VGS = 0,
di
F/dt = 50 A/s
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ248 | 8 A, 100 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ248 | 8 A, 100 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ258 | 12 A, 30 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ259SMP-FD | 20 A, 30 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ264-YB | 8 A, 60 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ247-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ248 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ248-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,100V,8A,0.25ohm,TO-220FM 制造商:Renesas 功能描述:Trans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220FM Box |
| 2SJ251 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-220AB |
| 2SJ252 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 12A I(D) | TO-220AB |
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