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參數(shù)資料
| 型號： | 2SJ246S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P通道MOS FET的性（P溝道MOSFET的） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 53K |
| 代理商： | 2SJ246S |
2SJ246(L), 2SJ246(S)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch*
–30
V
Gate to source voltage
±20
V
Drain current
–7
A
Drain peak current
1
–28
A
Body to drain diode reverse drain current
–7
A
Channel dissipation
2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Notes 1. PW
≤
10 μs, duty cycle
≤
1%
2. Value at T
C
= 25°C
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Static drain to source on state
resistance
Symbol Min
V
(BR)DSS
Typ
—
Max
—
Unit
V
Test conditions
I
D
= –10 mA, V
GS
= 0
–30
V
(BR)GSS
±20
—
—
V
I
G
= ±100 μA, V
DS
= 0
I
GSS
—
—
–1.0
—
—
—
—
0.12
±10
–100
–2.5
0.17
μA
μA
V
V
GS
= ±16 V, V
DS
= 0
V
DS
= –25 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –4 A, V
GS
= –10 V
V
GS(off)
R
DS(on)
—
3.0
—
0.21
5.0
660
0.31
—
—
S
pF
I
D
= –4 A, V
GS
= –4 V
I
D
= –4 A, V
DS
= –10 V
V
= –10 V, V
GS
= 0,
f = 1 MHz
Forward transfer admittance
Input capacitance
|y
fs
|
Ciss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Coss
Crss
t
d(on)
—
—
—
465
180
10
—
—
—
pF
pF
ns
I
D
= –4 A, V
GS
= –10 V,
R
L
= 7.5
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
t
r
t
d(off)
t
f
V
DF
—
—
—
—
55
135
135
–1.2
—
—
—
—
ns
ns
ns
V
I
F
= –7 A, V
GS
= 0
t
rr
—
90
—
μs
I
F
= –7 A, V
= 0,
di
F
/dt = 50 A/μs
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ247 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ247-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ248 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ248-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,100V,8A,0.25ohm,TO-220FM 制造商:Renesas 功能描述:Trans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220FM Box |
| 2SJ251 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-220AB |
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