參數(shù)資料
型號: 2SJ243
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FET FOR SWITCHING
中文描述: P溝道MOS場效應管的開關
文件頁數(shù): 3/6頁
文件大?。?/td> 61K
代理商: 2SJ243
2SJ243
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
100
T
C
- Case Temperature - C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
0
240
T
A
- Ambient Temperature - C
TRANSFER CHARACTERISTICS
I
D
–1.0
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|
y
f
|
–0.5
400
I
D
- Drain Current - mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
R
D
0
30
V
GS
- Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
R
D
–0.3
120
I
D
- Drain Current - mA
0
200
160
120
80
40
30
60
90
120
150
180
–10
–1
–0.1
–0.01
100
30
3
1
–1.0
–3.0
–10
–30
–200
80
60
40
20
20
40
60
80
100
120
140
160
–0.001
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
V
DS
= –3 V
Pulsed
150 C
T
A
= –25 C
25 C
75 C
–100
–25 C
T
A
= 75 C
25 C
150 C
V
= –3 V
Pulsed
20
10
I
D
= –0.1 A
I
D
= –10 mA
–1
–2
–3
–4
–5
–6
–7
–8
–0.6
–1
–2
–5
–10
75 C
150 C
25 C
T
A
= –25 C
100
80
60
40
20
Pulsed
V
GS
= –2.5 V
Pulsed
210
–100
10
3.0 cm
2
×
0.64 mm
Using ceramic substrate
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