參數(shù)資料
型號： 2SJ219
廠商： Hitachi,Ltd.
英文描述： Silicon P Channel MOS FET(P溝道MOSFET)
中文描述： 硅P通道MOS FET的性（P溝道MOSFET的）
文件頁數(shù)： 3/4頁
文件大小： 23K
代理商： 2SJ219
2SJ219(L), 2SJ219(S)
3
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Static drain to source on state
resistance
Symbol Min
V
(BR)DSS
Typ
—
Max
—
Unit
V
Test conditions
I
D
= –10 mA, V
GS
= 0
–60
V
(BR)GSS
±20
—
—
V
I
G
= ±100 μA, V
DS
= 0
I
GSS
—
—
–1.0
—
—
—
—
0.09
±10
–250
–2.0
0.11
μA
μA
V
V
GS
= ±16 V, V
DS
= 0
V
DS
= –50 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –8 A, V
GS
= –10 V*
V
GS(off)
R
DS(on)
1
—
6.0
—
0.13
9.5
1400
0.17
—
—
I
D
= –8 A, V
GS
= –4 V*
I
D
= –8 A, V
DS
= –10 V*
V
= –10 V, V
GS
= 0,
f = 1 MHz
1
Forward transfer admittance
Input capacitance
|y
fs
|
Ciss
S
pF
1
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Coss
Crss
t
d(on)
—
—
—
720
220
15
—
—
—
pF
pF
ns
I
D
= –8 A, V
GS
= –10 V,
R
L
= 3.75
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
r
t
d(off)
t
f
V
DF
—
—
—
—
120
220
160
–1.2
—
—
—
—
ns
ns
ns
V
I
F
= –15 A, V
GS
= 0
t
rr
—
230
—
ns
I
F
= –15 A, V
= 0,
di
F
/dt = 50 A/μs
See characteristic curves of 2SJ173
60
40
20
0
50
100
150
Case Temperature T
C
(°C)
Power vs. Temperature Derating
C
相關(guān)PDF資料
PDF描述
2SJ219S Silicon P Channel MOS FET(P溝道MOSFET)
2SJ220 Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0519-0 01; No. of Positions: 8; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Stack Height (mm): 7.55,7.80; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 2; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -30 to 85; General Description: Header; Straight; Changed Finish
2SJ220L SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
2SJ220S SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
2SJ221 Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0611-3 05; No. of Positions: 8; Connector Type: Jumper; Contact Spacing (mm): 2; Current Rating(Amps)(Max.): 2; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -30 to 85; General Description: Accessory; Short pin
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ219(L) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-262AA
2SJ219(S) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-263AB
2SJ219L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SJ219S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SJ220 制造商:HITACHI 功能描述:
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