參數(shù)資料
型號: 2SJ218-E
元件分類: JFETs
英文描述: 0.06 ohm, POWER, FET
封裝: TO-3PFM, 3 PIN
文件頁數(shù): 3/5頁
文件大?。?/td> 29K
代理商: 2SJ218-E
2SJ218
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–60
V
I
D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
–250
A
V
DS = –50 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
–2.0
V
I
D = –1 mA, VDS = –10 V
Static drain to source on state
R
DS(on)
0.033
0.042
I
D = –20 A, VGS = –10 V*
1
resistance
0.045
0.06
I
D = –20 A, VGS = –4 V*
1
Forward transfer admittance
|y
fs|
16
25
S
I
D = –20 A, VDS = –10 V*
1
Input capacitance
Ciss
3800
pF
V
DS = –10 V, VGS = 0,
Output capacitance
Coss
2000
pF
f = 1 MHz
Reverse transfer capacitance
Crss
490
pF
Turn-on delay time
t
d(on)
30
ns
I
D = –20 A, VGS = –10 V,
Rise time
t
r
235
ns
R
L = 1.5
Turn-off delay time
t
d(off)
670
ns
Fall time
t
f
450
ns
Body to drain diode forward
voltage
V
DF
–1.35
V
I
F = –45 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
300
ns
I
F = –45 A, VGS = 0,
di
F/dt = 50 A/s
Note:
1. Pulse test
See characteristic curves of 2SJ217
相關(guān)PDF資料
PDF描述
2SJ218-E 0.06 ohm, POWER, FET
2SJ219(S) 15 A, 60 V, 0.17 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ219(S) 15 A, 60 V, 0.17 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ219(L) 15 A, 60 V, 0.17 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ220(L) 20 A, 60 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ219(L) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-262AA
2SJ219(S) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-263AB
2SJ219L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SJ219S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SJ220 制造商:HITACHI 功能描述: