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參數(shù)資料
| 型號： | 2SJ217 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 49K |
| 代理商： | 2SJ217 |
2SJ217
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
–60
V
Gate to source voltage
±
20
V
Drain current
–45
A
Drain peak current
–180
A
Body to drain diode reverse drain current
–45
A
Channel dissipation
150
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes
1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at T
C
= 25
°
C
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–60
—
—
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= –50 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –20 A, V
GS
= –10 V*
1
I
D
= –20 A, V
GS
= –4 V*
1
I
D
= –20 A, V
DS
= –10 V*
1
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
–250
V
GS(off)
R
DS(on)
–1.0
—
–2.0
V
Static drain to source on state
—
0.033
0.042
resistance
—
0.045
0.06
Forward transfer admittance
|y
fs
|
Ciss
16
25
—
S
Input capacitance
—
3800
—
pF
Output capacitance
Coss
—
2000
—
pF
Reverse transfer capacitance
Crss
—
490
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
30
—
ns
I
D
= –20 A, V
GS
= –10 V,
R
L
= 1.5
Rise time
—
235
—
ns
Turn-off delay time
—
670
—
ns
Fall time
—
450
—
ns
Body to drain diode forward
voltage
—
–1.35
—
V
I
F
= –45 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
—
300
—
ns
I
F
= –45 A, V
GS
= 0,
di
F
/dt = 50 A/
μ
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ218 | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2SJ219L | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2SJ219 | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2SJ219S | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2SJ220 | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0519-0 01; No. of Positions: 8; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Stack Height (mm): 7.55,7.80; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 2; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -30 to 85; General Description: Header; Straight; Changed Finish |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ217-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ218 | 制造商:Renesas Electronics Corporation 功能描述:MOSFET P LOGIC TO-3PFM |
| 2SJ218-E | 制造商:Renesas Electronics Corporation 功能描述:MOSFET P LOGIC TO-3PFM |
| 2SJ219(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-262AA |
| 2SJ219(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-263AB |
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