參數(shù)資料
型號(hào): 2SJ214L
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel MOS FET(P溝道MOSFET)
中文描述: 硅P通道MOS FET的性(P溝道MOSFET的)
文件頁數(shù): 3/4頁
文件大?。?/td> 24K
代理商: 2SJ214L
2SJ214(L), 2SJ214(S)
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–60
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G
= ±100 μA, V
DS
= 0
Gate to source leak current
I
GSS
±10
μA
V
GS
= ±16 V, V
DS
= 0
V
DS
= –50 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –5 A, V
GS
= –10 V*
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
–250
μA
V
GS(off)
R
DS(on)
–1.0
–2.0
V
Static drain to source on state
resistance
0.13
0.18
1
0.18
0.25
I
D
= –5 A, V
GS
= –4 V*
I
D
= –5 A, V
DS
= –10 V*
V
= –10 V, V
GS
= 0,
f = 1 MHz
1
Forward transfer admittance
|y
fs
|
Ciss
4.0
6.5
S
1
Input capacitance
900
pF
Output capacitance
Coss
460
pF
Reverse transfer capacitance
Crss
130
pF
Turn-on delay time
t
d(on)
8
ns
I
D
= –5 A, V
GS
= –10 V,
R
L
= 6
Rise time
t
r
t
d(off)
t
f
V
DF
65
ns
Turn-off delay time
170
ns
Fall time
105
ns
Body to drain diode forward
voltage
–1.1
V
I
F
= –10 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
200
ns
I
F
= –10 A, V
= 0,
di
F
/dt = 50 A/μs
See characteristic curves of 2SJ172
60
40
20
0
50
100
150
Case Temperature T
C
(°C)
Power vs. Temperature Derating
C
相關(guān)PDF資料
PDF描述
2SJ214 Silicon P Channel MOS FET(P溝道MOSFET)
2SJ215 Silicon P-Channel MOS FET(P溝道MOSFET)
2SJ216 Silicon P Channel MOS FET(P溝道MOSFET)
2SJ217 Silicon P-Channel MOS FET
2SJ218 Silicon P Channel MOS FET(P溝道MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ214S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SJ215 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-247VAR
2SJ216 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SJ217 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET
2SJ217-E 制造商:Renesas Electronics Corporation 功能描述: