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參數(shù)資料
| 型號： | 2SJ211 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIMOLD, SC-59, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 251K |
| 代理商： | 2SJ211 |
Data Sheet D17907EJ4V0DS
2
2SJ211
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS =
100 V, VGS = 0 V
1.0
A
Gate Leakage Current
IGSS
VGS = m20 V, VDS = 0 V
m1.0
A
Gate Cut-off Voltage
VGS(off)
VDS =
5.0 V, ID = 1.0
A
1.4
1.8
2.4
V
Forward Transfer Admittance
Note
| yfs |
VDS =
5.0 V, ID = 10 mA
20
45
mS
Drain to Source On-state Resistance
Note
RDS(on)1
VGS =
4.0 V, ID = 10 mA
15
30
RDS(on)2
VGS =
10 V, ID = 10 mA
11
20
Input Capacitance
Ciss
VDS =
5.0 V
27
pF
Output Capacitance
Coss
VGS = 0 V
16
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
2
pF
Turn-on Delay Time
td(on)
VGS =
4.0 V, RG = 10
110
ns
Rise Time
tr
VDD =
5.0 V
150
ns
Turn-off Delay Time
td(off)
ID =
10 mA
160
ns
Fall Time
tf
150
ns
Note Pulsed
TEST CIRCUIT SWITCHING TIME
PG.
RG
0
VGS()
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS()
10%
90%
VGS
10%
0
ID()
90%
td(on)
tr
td(off)
tf
10%
τ
ID
0
ton
toff
<R>
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ211-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
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| 2SJ212 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Fied Effect Transistor |
| 2SJ212-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ212-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
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