- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49986 > 2SJ184-A 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SJ184-A |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 431K |
| 代理商： | 2SJ184-A |
Data Sheet D13095EJ2V0DS
2
2SK3056
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 16 A
8.0
20
S
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 16 A
24
34
m
RDS(on)2
VGS = 4.0 V, ID = 16 A
35
50
m
Input Capacitance
Ciss
VDS = 10 V
920
pF
Output Capacitance
Coss
VGS = 0 V
280
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
120
pF
Turn-on Delay Time
td(on)
ID = 16 A
25
ns
Rise Time
tr
VGS = 10 V
300
ns
Turn-off Delay Time
td(off)
VDD = 30 V
70
ns
Fall Time
tf
RG = 10
120
ns
Total Gate Charge
QG
ID = 32 A
25
nC
Gate to Source Charge
QGS
VDD = 48 V
3.3
nC
Gate to Drain Charge
QGD
VGS = 10 V
7.0
nC
Body Diode Forward Voltage
VF(S-D)
IF = 32 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 32A, VGS = 0 V
50
ns
Reverse Recovery Charge
Qrr
di/dt = 100A/
s68
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
10%
0
ID
90%
td(on)
tr td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ186CYEL-E | 500 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ190 | 1 A, 60 V, 1.6 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ193 | 1 A, 100 V, 3.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ197-AZ | 1.5 A, 60 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ197-T1 | 1500 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ185 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
| 2SJ185-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ185-T1B-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 50V 0.1A 3-Pin SC-59 T/R 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ186 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ186CY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。