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參數(shù)資料
| 型號(hào)： | 2SJ181STL-E |
| 元件分類： | JFETs |
| 英文描述： | 0.5 A, 600 V, 25 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-63, DPAK-3 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大小： | 100K |
| 代理商： | 2SJ181STL-E |
2SJ181(L), 2SJ181(S)
Rev.2.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–600
V
Gate to source voltage
VGSS
±15
V
Drain current
ID
–0.5
A
Drain peak current
ID (pulse)
Note 1
–1.0
A
Body to drain diode reverse drain current
IDR
–0.5
A
Channel dissipation
Pch
Note 2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–600
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±15
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±12 V, VDS = 0
Zero gate voltage drain current
IDSS
—
–100
A
VDS = –500 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
–2.0
—
–4.0
V
ID = –1 mA, VDS = –10 V
Static drain to source on state resistance
RDS (on)
—
15
25
ID = –0.3 A, VGS = –10 V
Note 3
Forward transfer admittance
|yfs|
0.3
0.45
—
S
ID = –0.3 A, VDS = –20 V
Note 3
Input capacitance
Ciss
—
220
—
pF
Output capacitance
Coss
—
55
—
pF
Reverse transfer capacitance
Crss
—
13
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
7
—
ns
Rise time
tr
—
20
—
ns
Turn-off delay time
td (off)
—
35
—
ns
Fall time
tf
—
35
—
ns
ID = –0.3 A
VGS = –10 V
RL = 100
Body to drain diode forward voltage
VDF
—
–0.85
—
V
IF = –0.5 A, VGS = 0
Body to drain diode reverse recovery time
trr
—
230
—
ns
IF = –0.5 A, VGS = 0
diF/dt = 50 A/
s
Note:
3. Pulse test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ181STR-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ182 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ182(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-251VAR |
| 2SJ182(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252VAR |
| 2SJ182L | 制造商:Renesas Electronics Corporation 功能描述:3A, 60V, DPAK - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET P D-PAK 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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