參數(shù)資料
型號: 2SJ181L
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET
中文描述: 硅P溝道場效應晶體管
文件頁數(shù): 7/10頁
文件大?。?/td> 46K
代理商: 2SJ181L
2SJ181(L), 2SJ181(S)
7
–1.0
–0.8
–0.6
–0.4
–0.2
0
Source to Drain Voltage V (V)
Pulse Test
0, 5 V
R
D
Reverse Drain Current vs.
Source to Drain Voltage
–0.2
–0.4
–0.6
–0.8
–1.0
V = –10 V
3
1
0.3
0.1
0.03
0.01
10 μ
100 μ
1 m
10 m
Pulse Width PW (S)
N
100 m
1
10
s
γ
DM
P
PW
T
D =T
ch – c = 6.25 °C/W, Tc = 25 °C
θ γ θ
θ
D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1sho Puse
Tc = 25°C
Normalized Transient Thermal Impedance vs. Pulse Width
相關PDF資料
PDF描述
2SJ181S Silicon P-Channel MOS FET
2SJ182 Silicon P-Channel MOS FET
2SJ181 Silicon P-Channel MOS FET
2SJ182L Silicon P Channel MOS FET(P溝道MOSFET)
2SJ182S Silicon P Channel MOS FET(P溝道MOSFET)
相關代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ181-L-E 制造商:Renesas Electronics Corporation 功能描述:
2SJ181L-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ181S 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:P-Channel MOS FET For High-Speed Switching
2SJ181STL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ181STR-E 制造商:Renesas Electronics Corporation 功能描述: