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參數(shù)資料
| 型號(hào)： | 2SJ181(S) |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 25 ohm, POWER, FET |
| 封裝： | DPAK-3 |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | 2SJ181(S) |
2SJ181(L), 2SJ181(S)
3
40
30
20
10
0
Channel
Dissipation
Pch
(W)
50
100
150
200
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
–10
–20
–50
–100 –200
–500 –1000
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
Operation in
this area is
limited by R DS(on)
Ta = 25 °C
10 s
DC
Operation
(Tc
=
25
°C)
1 ms
100
s
PW
=
10
ms
(1shot)
–1.0
–0.8
–0.6
–0.4
–0.2
0
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
–10
–20
–30
–40
–50
–10 V
–5 V
Pulse Test
V
= –4 V
GS
–4.5 V
–6 V
–0.5
–0.4
–0.3
–0.2
–0.1
0
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
–2
–4
–6
–8
–10
Tc = –25 °C
75 °C
25 °C
V
= –20 V
Pulse Test
DS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ181(L) | 25 ohm, POWER, FET |
| 2SJ181(S) | 25 ohm, POWER, FET |
| 2SJ181STL-E | 0.5 A, 600 V, 25 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ181S | 0.5 A, 600 V, 25 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ185 | 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ181STL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ181STR-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ182 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ182(L) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-251VAR |
| 2SJ182(S) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252VAR |
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